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cmos linear image sensors compact size and high cost-performance s11106-10 s11107-10 www.hamamatsu.com 1 compact size and high cost-performance position detection resin sealing type, surface mount package: 2.4 9.1 1.6 t mm object measurement pixel size: s11106-10: 63.5 63.5 m, 128 pixels s11107-10: 127 127 m, 64 pixels rotary encoder high-speed data rate: 10 mhz max. image reading 3 v or 5 v single power supply operation built-in timing generator allows operation with only start and clock pulse inputs low current consumption allows simultaneous charge integration absolute maximum ratings structure parameter symbol condition value unit supply voltage vdd ta=25 c -0.3 to +6 v clock pulse voltage v(clk) ta=25 c -0.3 to +6 v start pulse voltage v(st) ta=25 c -0.3 to +6 v operating temperature * 1 topr -40 to +85 c storage temperature * 1 tstg -40 to +85 c re ow soldering conditions * 2 tsol peak temperature 260 c, 3 times (see p.11) - * 1: no condensation * 2: jedec level 2a note: exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. always be sure to the produc t within the absolute maximum ratings. parameter s11106-10 s11107-10 unit number of pixels 128 64 - pixel pitch 63.5 127 m pixel height 63.5 127 m photosensitive area length 8.06 mm package glass epoxy - seal material silicone resin - the s11106-10 and s11107-10 are cmos linear image sensors of resin sealing type that delivers a video data rate of 10 mhz and low current consumption. the pixel size is 63.5 63.5 m (s11106-10), 127 127 m (s11107-10). features applications
cmos linear image sensors s11106-10, s11107-10 2 recommended terminal voltage (ta=25 c) electrical characterisitics (ta=25 c) electrical and optical characteristics [ta=25 c, vdd=3 v/5 v, v(clk)=v(st)=vdd, f(clk)=10 mhz] parameter symbol min. typ. max. unit supply voltage vdd 3.0 - 5.25 v clock pulse voltage high level v(clk) 3.0 vdd vdd + 0.25 v low level 0 - 0.4 v start pulse voltage high level v(st) 3.0 vdd vdd + 0.25 v low level 0 - 0.4 v parameter symbol s11106-10 s11107-10 unit min. typ. max. min. typ. max. clock pulse frequency f(clk) 5 k - 10 m 5 k - 10 m hz video data rate vr - f(clk) - - f(clk) - hz output impedance zo 60 - 140 60 - 140 current consumption * 3 vdd=3 v i 4.0 6.0 8.0 2.5 4.5 6.5 ma vdd=5 v 7.0 9.0 11.0 4.5 6.5 8.5 * 3: f(clk)=10 mhz, dark state, v(clk)=v(st)=vdd parameter symbol s11106-10 s11107-10 unit min. typ. max. min. typ. max. spectral response range 400 to 1000 400 to 1000 nm peak sensitivity wavelength p - 700 - 700 - nm photosensitivity * 4 s -80- -75- v/( lx s) conversion ef ciency * 5 ce - 0.75 - - 0.35 - v/e - output offset voltage vo 0.5 0.8 1.1 0.5 0.8 1.1 v dark output voltage * 6 vd - 0.02 0.2 - 0.04 0.4 mv saturation output voltage * 7 vdd=3 v vsat 1.8 2.0 2.2 1.8 2.0 2.2 v vdd=5 v 3.7 4.0 4.3 3.7 4.0 4.3 readout noise * 8 vdd=3 v nr - 1.0 1.5 - 0.9 1.5 mv rms vdd=5 v - 0.7 1.2 - 0.6 1.1 dynamic range 1 * 9 vdd=3 v dr1 - 2000 - - 2200 - times vdd=5 v - 5700 - - 6600 - dynamic range 2 * 10 vdd=3 v dr2 - 100000 - - 50000 - times vdd=5 v - 200000 - - 100000 - photoresponse nonuniformity * 4 * 11 prnu - 2 10 - 2 10 % * 4 : measured with a 2856 k tungsten lamp * 5 : output voltage generated per one electron * 6: integration time=10 ms * 7: voltage difference from vo * 8: dark state * 9 : dr1 = vsat/nr * 10 : dr2 = vsat/vd * 11: photoresponse nonuniformity (prnu) is the output nonuniformity that occurs when the entire photosensitive area is uniformly illuminated by light which is 50% of the saturation exposure level. prnu is measured using 112 pixels (s11106-10) excluding 8 pixels each at both ends or 56 pixels (s11107-10) excluding 4 pixels each at both ends, and is de ned as follows: prnu = ? x/x 100 [%] x: the average output of all pixels, ? x: difference between x and maximum or minimum output appearance inspection standards parameter test criterion inspection method foreign matter on photosensitive area 10 m max. automated camera
cmos linear image sensors s11106-10, s11107-10 3 spectral response (typical example) relative sensitivity (%) wavelength (nm) (ta=25 c) 0 400 600 800 1000 1200 20 40 60 80 100 kmpdb0347ea block diagram clk st vdd timing generator bias generator 18 6 eos video photodiode array 4 5 12 n-1n shift register hold circuit charge amp array vss 3 7 2 kmpdc0333eb
cmos linear image sensors s11106-10, s11107-10 4 output waveform of one pixel gnd [f(clk)=vr=10 mhz] 0.8 v (output offset voltage) 2.8 v (saturation output voltage=2.0 v) gnd clk v ideo 5 v/div. 1 v/div. 20 ns/div. gnd 0.8 v (output offset voltage) 4.8 v (saturation output voltage=4.0 v) gnd clk v ideo [f(clk)=vr=10 mhz] 5 v/div. 20 ns/div. 1 v/div. 5 v/div. 20 ns/div. 1 v/div. the timing for acquiring the video signal is synchronized with the rising edge of clk (see red arrow below). s11106-10 vdd=3 v vdd=5 v
cmos linear image sensors s11106-10, s11107-10 5 s11107-10 gnd [f(clk)=vr=10 mhz] 0.8 v (output offset voltage) 2.8 v (saturation output voltage=2.0 v) gnd clk v ideo 5 v/div. 1 v/div. 20 ns/div. gnd 0.8 v (output offset voltage) 4.8 v (saturation output voltage=4.0 v) gnd clk v ideo 5 v/div. 20 ns/div. 1 v/div. [f(clk)=vr=10 mhz] vdd=3 v vdd=5 v
cmos linear image sensors s11106-10, s11107-10 6 timing chart parameter symbol s11106-10 s11107-10 unit min. typ. max. min. typ. max. start pulse interval tpi(st) 36/f(clk) - - 36/f(clk) - - s start pulse high period thp(st) 4/f(clk) - - 4/f(clk) - - s start pulse low period tlp(st) 32/f(clk) - - 32/f(clk) - - s start pulse rise and fall times tr(st), tf(st) 0 10 15 0 10 15 ns clock pulse duty ratio - 45 50 55 45 50 55 % clock pulse rise and fall times tr(clk), tf(clk) 0 10 15 0 10 15 ns video delay time 1 * 12 vdd=3 v tvd1 -60- -60- ns vdd=5 v -35- -35- video delay time 2 * 12 vdd=3 v tvd2 -35- -35- ns vdd=5 v -30- -30- * 12: ta=25 c, clk=10 mhz, v(clk)=v(st)=vdd note: dark output increases if the start pulse period or the start pulse high period is lengthened. the internal timing generator starts operation at the rising edge of clk immediately after st goes low. the rising edge of this clk is regarded as ?1?. the integration time equals the high period of st plus 14 clk cycles and minus 100 ns. when the st pulse is set to low while the shift register is operating, the operation of the shift register is reset and the nex t shift register operation will start. the integration time can be changed by changing the ratio of the high and low periods of st. 1 2 3 4 14 15 16 17 18 19 20 trig clk st video eos 21 1/f(clk) thp(st) integration time 19 clocks 128 (s11106-10) 64 (s11107-10) 128 (s11106-10) 64 (s11107-10) clk st clk video tf(clk) tf(st) tr(st) tr(clk) tvd2 tvd1 tlp(st) thp(st) tpi(st) 1/f(clk) tlp(st) tpi(st) 1 kmpdc0515eb
cmos linear image sensors s11106-10, s11107-10 7 s11106-10 operation example thp(st)=11.6 s tlp(st)=3.2 s st tpi(st)=14.8 s kmpdc0388eb when the clock pulse frequency is maximized (video data rate is also maximized), the time of one scan is minimized, and the int egra- tion time is maximized (for outputting signals from all 128 channels) clock pulse frequency = video data rate = 10 mhz start pulse cycle = 148/f(clk) = 148/10 mhz = 14.8 s high period of start pulse = start pulse cycle - start pulse?s low period min. = 148/f(clk) - 32/f(clk) = 148/10 mhz - 32/10 mhz = 11.6 s integration time is equal to the high period of start pulse + 14 cycles of clock pulses - 100 ns, so it will be 11.6 + 1.4 - 0. 1 = 12.9 s. thp(st)=5.2 s tlp(st)=3.2 s st tpi(st)=8.4 s kmpdc0389eb when the clock pulse frequency is maximized (video data rate is also maximized), the time of one scan is minimized, and the int egra- tion time is maximized (for outputting signals from all 64 channels) clock pulse frequency = video data rate = 10 mhz start pulse cycle = 84/f(clk) = 84/10 mhz = 8.4 s high period of start pulse = start pulse cycle - start pulse?s low period min. = 84/f(clk) - 32/f(clk) = 84/10 mhz - 32/10 mhz = 5.2 s integration time is equal to the high period of start pulse + 14 cycles of clock pulses - 100 ns, so it will be 5.2 + 1.4 - 0.1 = 6.5 s. s11107-10
cmos linear image sensors s11106-10, s11107-10 8 dimensional outline (unit: mm) photosensitive area a 2.4 9.1 4.55 0.2 1 ch c 1.6 0.2 1.3 0.15 0.9 0.11 0.3 0.15 glass epoxy silicon resin photosensitive surface b 1.44 1.9 1.9 1.7 3.4 electrode (8 ) ?0.5 index mark 0.72 8.06 0.0635 8.06 0.127 a 0.4 0.5 b type no. s11106-10 s11107-10 direction of scan tolerance unless otherwise noted: 0.2 c 128 ch 64 ch [top view] [side view] [bottom view] pin connections pin no. symbol description input/output 1 clk clock pulse input 2 vss ground - 3 vss ground - 4 eos end of scan output 5 video video signal output 6 vdd supply voltage input 7 vss ground - 8 st start pulse input kmpda0314eb recommended land pattern 3.4 7.2 1.44 (8 ) ?0.7 kmpdc0390ea
cmos linear image sensors s11106-10, s11107-10 9 details of active area (unit: m) 59.5 59.5 59.5 46 43 43 46 48.5 48.5 4 4 126 ch 59.5 4 4 4 4 63.5 63.5 56.75 56.75 2 ch 3 ch 86.8 86.8 82.1 82.1 63.5 63.5 59.5 4 63.5 63.5 63.5 59.5 4 63.5 63.5 63.5 128 ch 127 ch 1 ch kmpdc0335eb s11106-10 s11107-10 60 127 67 127 64 ch 63 ch 67 127 62 ch 67 127 67 127 3 ch 67 127 67 127 2 ch 1 ch kmpdc0336ea kmpdc0518ea application circuit example + - + + + + + video video eos eos vss vss clk clk vdd vss st st +5 v +5 v +6 v -6 v +5 v 0.1 f 0.1 f 0.1 f 22 pf 74hc541 74hc541 0.1 f 0.1 f 22 f/25 v 22 f/25 v 22 f/25 v 22 f/25 v 22 f/25 v s11106-10, s11107-10 82 82 100 51 lt1818
cmos linear image sensors s11106-10, s11107-10 10 packing quantity 2000 pcs/reel packing speci cations may vary on orders less than 2000 pieces. packing type reel and desiccant in moisture-proof packing (vaccum-sealed) kmpdc0451ea 4.0 0.1 7.5 0.1 1.75 0.1 9.45 0.1 2.0 0.1 8.0 0.1 1.89 0.1 0.32 0.05 2.75 0.1 ( ? 1.5 -0 ) 16.0 -0.1 +0.3 +0.25 ?1.5 -0 +0.1 reel feed direction 1 ch embossed (unit: mm, material: polystyrene, conductive) standard packing speci cations reel (conforms to jeita et-7200) dimensions hub diameter tape width material electrostatic characteristics 330 mm 100 mm 16 mm ppe conductive
cmos linear image sensors s11106-10, s11107-10 11 recommended temperature pro le for re ow soldering (typical example) ? this product supports lead-free soldering. after unpacking, store it in an environment at a temperature of 30 c or less and a humidity of 60% or less, and perform soldering within 4 weeks. ? the effect that the product receives during re ow soldering varies depending on the circuit board and re ow oven that are used. before actual re ow soldering, check for any problems by tesitng out the re ow soldering methods in advance. ? when three or more months have passed or if the packing bag has not been stored in an environment described above, perform baking. for the baking method, see the precautons ?resin sealed type cmos linear image sensors.? precautions (1) electrostatic countermeasures this device has a built-in protection circuit as a safeguar d against static electrical charges. however, to prevent destroying the device with electrostatic charges, take countermeasures such as grounding yourself, the workbench and tools. protect this device from surge voltages which might be caused by peripheral equipment. (2) package handling the photosensitive area of this device is sealed and protected by transparent resin. when compared to a glass faceplate, the su rface of transparent resin may be less uniform and is more likely to be scratched. be very careful when handling this device and also when designing the optical systems. dust or grime on the light input window might cause nonuniform sensitivity. to remove dust or grime, blow it off with compresse d air. (3) surface protective tape protective tape is af xed to the surface of this product to protect the photosensi tive area. after assembling the product, remove the tape before use. (4) operating and storage environments handle the device within the temperature range speci ed in the absolute maximum ratings. operating or storing the device at an ex- cessively high temperature and humidity may cause variations in performance characteristics and must be avoided. (5) uv exposure this product is not designed to prevent deterioration of characteristics caused by uv exposure, so do not expose it to uv light . time 300 c preheating 60 to 120 s soldering 60 to 150 s peak temperature 260 c max. 217 c 200 c 150 c peak temperature - 5 c 30 s max. 25 c to peak temperature 8 m max. heating 3 c/s max. cooling 6 c/s max. temperature kmpdb0405ea
cmos linear image sensors s11106-10, s11107-10 cat. no. kmpd1150e02 aug. 2014 dn www.hamamatsu.com hamamatsu photonics k.k., solid state division 1126-1 ichino-cho, higashi-ku, hamamatsu city, 435-8558 japan, telephone: (81) 53-434-3311, fax: (81) 53-434-5184 u.s.a.: hamamatsu corporation: 360 foothill road, bridgewater, n.j. 08807, u.s.a., telephone: (1) 908-231-0960, fax: (1) 908-23 1-1218 germany: hamamatsu photonics deutschland gmbh: arzbergerstr. 10, d-82211 herrsching am ammersee, germany, telephone: (49) 8152- 375-0, fax: (49) 8152-265-8 france: hamamatsu photonics france s.a.r.l.: 19, rue du saule trapu, parc du moulin de massy, 91882 massy cedex, france, teleph one: 33-(1) 69 53 71 00, fax: 33-(1) 69 53 71 10 united kingdom: hamamatsu photonics uk limited: 2 howard court, 10 tewin road, welwyn garden city, hertfordshire al7 1bw, unit ed kingdom, telephone: (44) 1707-294888, fax: (44) 1707-325777 north europe: hamamatsu photonics norden ab: torshamnsgatan 35 16440 kista, sweden, telephone: (46) 8-509-031-00, fax: (46) 8-5 09-031-01 italy: hamamatsu photonics italia s.r.l.: strada della moia, 1 int. 6, 20020 arese (milano), italy, telephone: (39) 02-93581733 , fax: (39) 02-93581741 china: hamamatsu photonics (china) co., ltd.: b1201, jiaming center, no.27 dongsanhuan beilu, chaoyang district, beijing 100020 , china, telephone: (86) 10-6586-6006, fax: (86) 10-6586-2866 product specifications are subject to change without prior notice due to improvements or other reasons. this document has been carefully prepared and the information contained is believed to be accurate. in rare cases, however, there may be inaccuracies such as text errors. before using these products, always contact us for the delivery specification sheet to check the latest specifications. the product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovere d and reported to us within that one year period. however, even if within the warranty period we accept absolutely no liability for any loss caused by natural d isasters or improper product use. copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. information described in this material is current as of august 2014. 12 related information precautions ? notice ? image sensor ? resin-sealed cmos linear image sensors www.hamamatsu.com/sp/ssd/doc_en.html

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